The applicability of a model to the degenerate InN
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This paper presents a theoretical study of the carrier mobility in Indium Nitride (InN) material system. We used a model, referred to as alpha-model, based on a simplified relationship between the donor and dislocation densities, N-D = alpha(N-dis/c). It has been shown that this model correctly predicts the low temperature mobilities in InN/sapphire lattice mismatched system with high concentrations of impurities, point defects, and dislocations. It yields important information on the donors and dislocations in the InN/Al2O3 interface region. The donor and dislocation concentrations were calculated and compared favorably with the recently reported Hall mobility data. The specific a value was calculated for InN and its validity was confirmed. The predicted and experimental results also suggested that the potential candidate for dominant donor in InN is hydrogen.