Browsing by Author "Tülek, Remziye"
Now showing items 1-17 of 17
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Bor katkılı ZnO/Cam ince filmlerin optik özelliklerinin incelenmesi
Duru, Gamze (Balıkesir Üniversitesi Fen Bilimleri Enstitüsü, 2022)Bu tez çalışmasında döndürmeli kaplama (spin coating) tekniği ile cam alttaş üzerine büyütülen saf ve bor katkılı (%1, %2, %4 ve %5) ZnO ince filmlerin optik özellikleri incelenmiştir. Bu örneklerin optik özellikleri, 349 ... -
Comparison of photoluminescence properties of Zn-and O-polar ZnO thin films
Tülek, Remziye; Parlak, Mehmet; Teke, Ali (National Institute of Optoelectronics, 2023)Optical properties of Zn- and O-polar Zinc Oxide (ZnO) thin films grown by molecular beam epitaxy (MBE) were investigated by the temperature and excitation intensity dependent photoluminescence (PL) measurements. The ... -
Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures
Tülek, Remziye; Ilgaz, Aykut; Gökden, Sibel; Teke, Ali; Öztürk, Mustafa Kemal; Kasap, Mehmet; Özçelik, Süleyman; Arslan, Engin; Özbay, Ekmel (Amer Inst Physics, 2009)The transport properties of high mobility AlGaN/AlN/GaN and high sheet electron density AlInN/AlN/GaN two-dimensional electron gas (2DEG) heterostructures were studied. The samples were grown by metal-organic chemical vapor ... -
The effect of aln interlayer thicknesses on scattering processes in lattice-matched alınn/gan two-dimensional electron gas heterostructures
Teke, Ali; Gökden, Sibel; Tülek, Remziye; Leach, J. H.; Fan, Q.; Xie, J.; Özgür, H.; Morkoc, H (IOP Publishing Ltd, 2009)The scattering mechanisms governing the transport properties of high mobility AlInN/AlN/GaN two-dimensional electron gas (2DEG) heterostructures with various AIN spacer layer thicknesses from zero to 2 nm were presented. ... -
The effect of GaN thickness inserted between two AlN layers on the transport properties of a lattice matched AlInN/AlN/GaN/AlN/GaN double channel heterostructure
Tülek, Remziye; Arslan, Engin; Bayraklı, Aydın; Turhan, Sevil; Gökden, Sibel; Duygulu, Özgür; Kaya, Ali; Fırat, Tezer (Elsevier Science Sa, 2014)One AlInN/AlN/GaN single channel heterostructure sample and four AlInN/AlN/GaN/AlN/GaN double channel heterostructure samples with different values of the second GaN layer were studied. The interface profiles, crystalline ... -
Energy relaxations of hot electrons in AlGaN/AlN/GaN heterostructures grown by MOCVD on sapphire and 6H-SiC substrates
Ilgaz, Aykut; Gökden, Sibel; Tülek, Remziye; Teke, Ali; Özçelik, Süleyman; Özbay, Ekmel (EDP Sciences S A, 2011)In this work, we investigated the hot-electron dynamics of AlGaN/GaN HEMT structures grown by MOCVD on sapphire and SiC substrates at 80 K. High-speed current-voltage measurements and Hall measurements over the temperature ... -
Ferromanyetik levhalarda oluşan mikro çatlakların algılanması
Acar, Berkan (Balıkesir Üniversitesi Fen Bilimleri Enstitüsü, 2016)Bu çalışmada, ferromanyetik levhalarda yüzey çatlaklarını belirlemek için bir manyetik tahribatsız ölçüm sistemi kuruldu. Bu sistemle, ferromanyetik levhalar ile farklı yapay çatlak modelleri yapıldı. Manyetik akı kaçaklarını ... -
InGaN tabanlı ışık yayan diyotarın optik özellikleri
Eren, Remziye Balcı (Balıkesir Üniversitesi Fen Bilimleri Enstitüsü, 2018)Bu tez çalışmasında, Metal Organik Kimyasal Buhar Biriktirme (MOCVD) yöntemiyle (0001) doğrultusunda safir alttaş üzerine büyütülen InGaN tabanlı çoklu kuantum kuyulu ışık yayan diyot (LED) yapısına sahip dört adet farklı ... -
Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the ıngan channel
Gökden, Sibel; Tülek, Remziye; Teke, Ali; Leach, J. H.; Fan, Q.; Xie, J.; Lisesivdin, Sefer Bora; Morkoc, H. (Iop Publishing Ltd, 2010)The scattering mechanisms limiting the carrier mobility in AlInN/AlN/InGaN/GaN two-dimensional electron gas (2DEG) heterostructures were investigated and compared with devices without InGaN channel. Although it is expected ... -
Morphological and optical characterizations of different ZnO nanostructures grown by mist-CVD
Narin, Polat; Narin, Ece Kutlu; Kayral, Senem; Tülek, Remziye; Gökden, Sibel; Teke, Ali; Lisesivdin, Sefer Bora (Elsevier, 2022)In this study, the effects of growth temperatures, post-growth treatment, and substrate cleaning recipes on structural, morphological, luminescence, and growth kinetics of ZnO nanostructures grown by mist Chemical Vapor ... -
Synthesis and characterization of well-dispersed amorphous LnBO(3)center dot 3H(2)O (Ln: Dy, Tb) nanoparticles
Beyaz, Seda; Bülbül, Berna; Tülek, Remziye; Teke, Ali (Springer International Publishing Ag, 2020)Lanthanide nanoborates (LnBO(3)center dot 3H(2)O (Ln: Dy, Tb)) were prepared in the presence of polyethylene glycol (PEG) using a buffered-precipitation method. The same procedure was performed without adding PEG to expose ... -
Synthesis and optical characterization of bipod carbazole derivatives
Çiçek, Baki; Çağlı, Merve; Tülek, Remziye; Teke, Ali (Walter De Gruyter GMBH, 2020)In this study, some new biscarbazole derivatives were synthesized for the purpose of being used in OLED technologies and related areas. The following compounds: {1,2-bis(2-(3,6-diphenyl-9H-carbazole-9-yl) ethoxy)ethane ... -
Synthesis and optical characterization of novel carbazole schiff bases
Çicek, Baki; Çalışır, Ümit; Tavaslı, Mustafa; Tülek, Remziye; Teke, Ali (Elsevier Science BV, 2018)In this study, newly substituted carbazole derivatives of S1; (Z)-4-((9-isobutyl-9H-carbazol-3-ylimino) methyl)phenol, S2; (Z)-9-butyl- N-(2,3,4-trimethoxybenzylidine)-9H-carbazol-3-amine, S3; (Z)-4-((9-octyl-9H-carbazol ... -
The temperature and excitation power density dependent photoluminescence study of Ga-doped ZnO thin films
Kayral, S.; Tülek, Remziye; Gökden, S.; Teke, Ali (Natl Inst Optoelectronics, 2022)Temperature and excitation power density dependent photoluminescence (PL) studies were performed on Ga-doped ZnO (GZO) thin films grown on a-(11 (2) over bar0) and c-(0001) sapphire substrates by Molecular Beam Epitaxy ... -
Temperature dependent hot electron transport in slightly lattice mismatched AlInN/AlN/GaN heterostructures
Ilgaz, Aykut; Gökden, Sibel; Tülek, Remziye; Teke, Ali; Özçelik, Süleyman; Özbay, Ekmel (Natl Inst Optoelectronics, 2014)In this work, the hot-electron transport properties of AlInN/AlN/GaN HEMT structures with a high sheet electron density of 4.84x10(13) cm(-2) grown by MOCVD (Metal Organic Chemical Vapor Deposition) on sapphire substrate ... -
Transport properties of epitaxial graphene grown on SIC substrate
Ağızaçmak, Selman; Tülek, Remziye; Gökden, Sibel; Teke, Ali; Arslan, Engin; Aygar, Ayşe Melis; Özbay, Ekmel (National Institute of Optoelectronics, 2017)In this study, the Hall effect measurement of graphene on SiC substrate was carried out as a function of temperature (12-300 K). Hall data were first analyzed to extract the temperature dependent mobilities and carrier ... -
Yüksek performanslı Al(In)GaN/AIN(In)GaN heteroeklem yapıların iletim özellikleri
Tülek, Remziye (Balıkesir Üniversitesi Fen Bilimleri Enstitüsü, 2010)Bu çalışmada Al(In)GaN/Ga(In)N iki boyutlu elektron gaz (2DEG) heteroyapıların iletim özellikleri, deneysel ve teorik olarak çalışıldı. Deneysel kısımda ilk olarak örnekler metal organik kimyasal buhar depozisyonu (MOCVD) ...
