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Epitaxy of highly optical efficient GaN on O and Zn face ZnO
(2003)
ZnO is a highly efficient photon emitter, has optical and piezoelectric properties that are attractive for a variety of applications. Due to its stacking order and close lattice to GaN, it is also considered as a substrate ...
4H-SiC photoconductive switching devices for use in high-power applications
(Amer Inst Physics, 2003)
Silicon carbide is a wide-band-gap semiconductor suitable for high-power high-voltage devices and it has excellent properties for use in photoconductive semiconductor switches (PCSSs). PCSS were fabricated as planar ...
p-GaN-i-GaN/AlGaN multiple-quantum well n-AlGaN back-illuminated ultraviolet detectors
(Minerals Metals Materials So, 2003)
The spectral response of back-surface-illuminated p-GaN-i-GaN/AlGaN multiple-quantum well (MQW)-n-AlGaN ultraviolet (UV) photodetector is reported. The structure was grown by molecular-beam epitaxy on a c-plane sapphire ...
Photo-induced transient spectroscopy and in-plane photovoltage in GaInNAs/GaAs quantum wells
(Elsevier Science Bv, 2003)
We have studied the optical quality of sequentially grown undoped Ga0.8In0.2As and Ga0.8In0.2N0.015As0.985 quantum wells (QWs). Spectral and time-resolved in-plane photovoltage (IPV) and photo-induced transient spectroscopy ...
In-plane photovoltage and photoluminescence studies in sequentially grown GaInNAs and GaInAs quantum wells
(Amer Inst Physics, 2003)
We have investigated in-plane photovoltage (IPV) and photoluminescence (PL) in sequentially grown Ga0.8In0.2As/GaAs and Ga0.8In0.2N0.015As0.985/GaAs-quantum wells. Temperature, excitation intensity, spectral and time ...
Photoluminescence from freestanding GaN with (101̄0) orientation
(2003)
Freestanding GaN templates with (101¯0) orientation (M-plane) were obtained by halide vapor phase epitaxy (HVPE) on nearly lattice-matched LiAlO 2 and subsequent removal of the substrate by wet chemical etching. Photoluminescence ...
GaN/AlGaN back-illuminated multiple-quantum-well Schottky barrier ultraviolet photodetectors
(Pergamon-Elsevier Science Ltd, 2003)
We report on characterization and operation principle of a set of GaN/AlGaN multiple-quantum-well (MQW) photovoltaic detectors. The structures were grown by molecular beam epitaxy (MBE) on c-plane sapphire substrates and ...
