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Electron transport mechanism in GaN/AlGaN HEMT structures
(2003)
The electron transport mechanism in GaN/AlGaN HEMT (High Electron Mobility Transistors) structures grown with MBE on sapphire substrate was investigated by using the temperature dependence of
the Hall coefficient, ...
Effect of non-drifting hot phonons on high-field drift velocity in GaN/AlGaN
(Iop Publishing Ltd, 2003)
We report on the studies of steady-state high-field drift velocity in GaN/AlGaN HEMT structures. The results are compared with a model taking into account the effect of hot phonon production on the high-field transport of ...
Electron transport mechanism in GaN/AlGaN HEMT structures
(2003)
The electron transport mechanism in GaN/AlGaN HEMT (High Electron Mobility Transistors) structures grown with MBE on sapphire substrate was investigated by using the temperature dependence of the Hall coefficient, resistivity, ...
