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Electrical characteristics of a schottky device based on maleic anhydride deposited on p-type silicon by spin coating technique

Ocak, Sema Bilge; Selçuk, Ahmet; Kahraman, Gülten; Akıl Birkan, Selçuk (Natl Inst Optoelectronics, 2014)

Al/Maleic Anhydride (MA)/p-Si metal-polymer-semiconductor (MPS) structures were prepared on p-Si substrate by spin coating and these MPS structures had a good rectifying behavior. The capacitance-voltage (C-V) and ...