| dc.contributor.author | Zanato, D | |
| dc.contributor.author | Gökden, Sibel | |
| dc.contributor.author | Balkan, Naci | |
| dc.contributor.author | Ridley, Brian | |
| dc.contributor.author | Schaff, Wiliam J | |
| dc.date.accessioned | 2019-10-17T08:05:12Z | |
| dc.date.available | 2019-10-17T08:05:12Z | |
| dc.date.issued | 2003 | en_US |
| dc.identifier.issn | 0749-6036 | |
| dc.identifier.uri | https://doi.org/10.1016/j.spmi.2004.02.022 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12462/7854 | |
| dc.description | Gökten, Sibel (Balikesir Author) | en_US |
| dc.description.abstract | We report on Hall mobility and carrier density measurements on n-type GaN epilayers grown on sapphire by MBE. The results are discussed using a theoretical model that takes into account the most important scattering mechanisms contributing to determining the mobility of electrons in 3D. We show that polar-optical phonon scattering and dislocation scattering dominate at high temperatures especially in samples with low carrier density, while impurity and dislocation scattering take over at low temperatures. | en_US |
| dc.language.iso | eng | en_US |
| dc.publisher | Ademic Press Ltd-Elsevier Science Ltd | en_US |
| dc.relation.isversionof | 10.1016/j.spmi.2004.02.022 | en_US |
| dc.rights | info:eu-repo/semantics/embargoedAccess | en_US |
| dc.subject | Dislocation Scattering | en_US |
| dc.subject | Mobility | en_US |
| dc.subject | Donors | en_US |
| dc.title | Momentum relaxation of electrons in n-type bulk GaN | en_US |
| dc.type | article | en_US |
| dc.relation.journal | Superlattices and Microstructures | en_US |
| dc.contributor.department | Fen Edebiyat Fakültesi | en_US |
| dc.identifier.volume | 34 | en_US |
| dc.identifier.issue | 1-2 | en_US |
| dc.identifier.startpage | 77 | en_US |
| dc.identifier.endpage | 85 | en_US |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
