Güncel Gönderiler: Fizik Bölümü
Toplam kayıt 670, listelenen: 201-220
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The langmuir properties of a mixed copolysiloxane monolayer
(2001)A family of linear copolysiloxanes [1-3] substituted with side chains containing carboxylic head groups has been synthesised. The Langmuir properties of the mixed monolayer at the water-air interface has been studied using ... -
Dinuclear pyrazolato-N:N′-bridged dinickel(II) complex of 1,3-bis(5-chlorosalicylideneamino)propan-2-ol
(Munksgaard Int Publ. Ltd.,Copenhagen K, Denmark, 2001)The title compound, µ-[1,3-bis(5-chloro-2- oxidobenzylideneamino)propan-2-olato(3-)]-O,N,O':O', N',O¨-µ-(3,5-dimethyl-pyrazolato)-N:N'-dinickel(II), [Ni2(C17H13Cl2N2O3) (C5H7-N2)], has crystallographic mirror symmetry. The ... -
The first 3D and trinuclear cyano-bridged Fe-III-Fe-III(CN)(6) complexes: structure and magnetic characterizations
(Royal Soc Chemistry, 2015)[Fe(SB)(H2O)]ClO4 and[NEt4](3)[Fe(CN)(6)] react in methanol to give a cis cyano-bridged assembly, 3D[NEt4][Fe(5- CIL1)](2)[Fe(CN)(6)] (5-ClL1H(2) = N, N'-bis(5-chlorosalicylidenato)-2,2-dimethyl-1,3-diaminopropane), 1, and ... -
Structural analysis of a GaAs/AlxGa1-x As hot electron light emitter using double axis x-ray diffraction
(2002)We report on interference peaks in double axis x-ray rocking curves of tunable wavelength hot electron light emitters. The device is based on a p-GaAs and n-Ga1-xAlxAs heterojunction containing an inversion layer on the ... -
Pyroelectric figure of merit for a heterogeneous alternate layer Langmuir-Blodgett film system
(2002)The pyroelectric effect arises as a result of the change of the polarisation with temperature. Pyroelectric materials, which must have a non-centrosymmetric structure, exhibit an inherent electrical polarisation that changes ... -
Enhancement of optical and structural quality of semipolar (11(2)over-bar2) gan by introducing nanoporous sinx interlayers
(Spie-Int Soc Optical Engineering, 2015)Enhancement of optical and structural quality of semipolar (11 (2) over bar2) GaN grown by metal-organic chemical vapor deposition on planar m-sapphire substrates was achieved by using an in situ epitaxial lateral overgrowth ... -
Indium-incorporation efficiency in semipolar (11(2)over-bar2) oriented ingan-based light emitting diodes
(Spie-Int Soc Optical Engineering, 2015)Reduced electric field in semipolar (11 (2) over bar2) GaN/InGaN heterostructures makes this orientation attractive for high efficiency light emitting diodes. In this work, we investigated indium incorporation in semipolar ... -
Active region dimensionality and quantum efficiencies of ingan leds from temperature dependent photoluminescence transients
(Spie-Int Soc Optical Engineering, 2015)Temperature dependent recombination dynamics in c-plane InGaN light emitting diodes (LEDs) with different well thicknesses, 1.5, 2, and 3 nm, were investigated to determine the active region dimensionality and its effect ... -
Optimisation of the tunable wavelength hot electron light emitter
(1999)We report on the optimization of the hot electron tunable wavelength surface light emitting device developed by us. The device consists of a p-GaAs, and n-Ga1-cursive Greek chi Alcursive Greek chi As heterojunction containing ... -
Photoluminescence from freestanding GaN with (101̄0) orientation
(2003)Freestanding GaN templates with (101¯0) orientation (M-plane) were obtained by halide vapor phase epitaxy (HVPE) on nearly lattice-matched LiAlO 2 and subsequent removal of the substrate by wet chemical etching. Photoluminescence ... -
Epitaxy of highly optical efficient GaN on O and Zn face ZnO
(2003)ZnO is a highly efficient photon emitter, has optical and piezoelectric properties that are attractive for a variety of applications. Due to its stacking order and close lattice to GaN, it is also considered as a substrate ... -
Electron transport mechanism in GaN/AlGaN HEMT structures
(2003)The electron transport mechanism in GaN/AlGaN HEMT (High Electron Mobility Transistors) structures grown with MBE on sapphire substrate was investigated by using the temperature dependence of the Hall coefficient, resistivity, ... -
Simple approach to fourth generation effects in B→X sℓ+ℓ- decay
(2004)In a scenario in which fourth generation fermions exist, we study the effects of new physics on the differential decay width, forward-backward asymmetry, and the integrated branching ratio for B›Xsl +l-, decay with (l = ... -
Pyroelectric effect in Langmuir-Blodgett films incorporating ions
(2004)Non-centrosymmetric materials exhibiting a temperature-dependent electric polarisation are known as pyroelectrics. It is well known that the tilting mechanism and proton transfer between acid/amine interactions play an ... -
Different contributions in ω → π0ηγ and ρ → π0ηγ decays
(American Physical Society, 2004)We examine the radiative ? › ?0?? and ? › ?0?? decays in a phenomenological framework We consider the vector meson dominance mechanism, chiral loops, intermediate a0-meson and ? - ? mixing. We find the values of the decay ... -
Room temperature conduction characteristics of calix [4] acid/amine alternate layer Langmuir-blodgett films
(2005)Multilayered Langmuir-Blodgett (LB) films were prepared by transferring alternately six layers of calix [4] acid and five calix [4] amine molecules from the subphase of Millipore water (18MΩ cm-1) on aluminised glass ... -
Poly(methyl methacrylate) monolayers at the air-water interface
(2005)Several poly(methyl methacrylate) (PMMA) molecules with various chain numbers has been synthesised using Emulsifier-free emulsion polymerisation method. Langmuir-Blodgett thin film technique is an excellent method to ... -
Cs adsorption on Si(001) surface: An ab initio study
(2005)First-principles calculations using density functional theory based on norm-conserving pseudopotentials have been performed to investigate the Cs adsorption on the Si(001) surface for 0.5 and 1 ML coverages. We found that ... -
III-V nitrides and silicon carbide as optoelectronic materials
(CRC Press, 2006)SiC has emerged as the leading candidate for high temperature and high power device applications due in part to the commercial availability of high quality SiC substrates of ever increasing diameter and quality. These ... -
Atomic and electronic structure of Sr/Si(0 0 1)-(2 × 2)
(2006)The adsorption of Sr on the Si(0 0 1) surface with the semiantiphase dimer (2 × 2) reconstruction is studied, based upon the ab initio pseudopotential calculations. It is calculated that the semiantiphase dimer (2 × 2) ...
