Photoluminescence from freestanding GaN with (101̄0) orientation
Özet
Freestanding GaN templates with (101¯0) orientation (M-plane) were obtained by halide vapor phase epitaxy (HVPE) on nearly lattice-matched LiAlO 2 and subsequent removal of the substrate by wet chemical etching. Photoluminescence (PL) spectrum from both sides of the GaN template investigated is dominated by peaks at 3,47, 3.42 and 3.36 eV, tentatively attributed to an exciton bound to the neutral shallow donor and two unidentified structural defects, respectively. The quantum efficiency of the exciton-related emission exceeds 10%, whereas that of the combined emission from the defect-related bands (red, yellow and blue) is below 0.1%. The evolution of the PL spectrum with temperature and excitation intensity is analyzed in detail. Effects of polishing and etching on the PL properties are also discussed.
